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ADVANCED INFORMATION
MX28F640C3T/B
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
FEATURES
* Bit Organization: 4,194,304 x 16 * Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40 C~85 C * Fast access time : 90/120ns * Low power consumption - 9mA maximum active read current, f=5MHz (CMOS input) - 21mA program erase current maximum (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode * Sector architecture - Sector Erase (Sector structure : 4Kword x 2 (boot sectors), 4Kword x 6 (parameter sectors), 32Kword x 127 (parameter sectors) - Top/Bottom Boot * Auto Erase (chip & sector) and Auto Program - Automatically program and verify data at specified address * Automatic Suspend Enhance - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register report * Automatic sector erase, full chip erase, word write and sector lock/unlock configuration * Status Reply - Detection of program and erase operation completion. - Command User Interface (CUI) - Status Register (SR) * Data Protection Performance - Include boot sectors and parameter and main sectors to be block/unblock * 100,000 minimum erase/program cycles * Common Flash Interface (CFI) * 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User-Programmable * Latch-up protected to 100mA from -1V to VCC+1V * Package type: - 48-pin TSOP (12mm x 20mm) - 48-ball CSP (11mm x 12mm)
GENERAL DESCRIPTION
The MX28F640C3T/B is a 64-mega bit Flash memory organized as 4M words of 16 bits. The 1M word of data is arranged in eight 4Kword boot and parameter sectors, and 127 32Kword main sector which are individually erasable. MXIC's Flash memories offer the most costeffective and reliable read/write non-volatile random access memory. The MX28F640C3T/B is packaged in 48pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX28F640C3T/B offers access time as
fast as 90ns, allowing operation of high-speed microprocessors without wait states. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F640C3T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming
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mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX28F640C3T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. The dedicated VPP pin gives complete data protection when VPP< VPPLK. A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for erase, full chip erase, word write and sector lock/unlock configuration operations. A sector erase operation erases one of the device's 32Kword sectors typically within 1.0s, 4K-word sectors typically within 0.5s independent of other sectors. Each sector can be independently erased minimum 100,000 times. Sector erase suspend mode allows system software to suspend sector erase to read or write data from any other sector. Writing memory data is performed in word increments of the device's 32K-word sectors typically within 0.8s and 4K-word sectors typically within 0.1s. Word program suspend mode enables the system to read data or execute code from any other memory array location. MX28F640C3T/B features with individual sectors locking by using a combination of bits thirty-nine sector lockbits and WP, to lock and unlock sectors. The status register indicates when the WSM's sector erase, full chip erase, word program or lock configuration operation is done. The access time is 90/120ns (tELQV) over the operating temperature range (-40 to +80 and VCC supply C C) voltage range of 2.7V~3.6V. MX28F640C3T/B's power saving mode feature substantially reduces active current when the device is in static mode (addresses not switching). In this mode, the typical ICCS current is 7uA (CMOS) at 3.0V VCC. As CE and RESET are at VCC, ICC CMOS standby mode is enabled. When RESET is at GND, the reset mode is enabled which minimize power consumption and provide data write protection. A reset time (tPHQV) is required from RESET switching high until outputs are valid. Similarly, the device has a wake time (tPHEL) from RESET-high until writes to the CUI are recognized. With RESET at GND, the WSM is reset and the status register is cleared.
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BLOCK DIAGRAM
Q0~Q7
Output Buffer
Input Buffer I/O Logic VCC
Output Multiplexer
Identifier Register
Data Register
CE Command User Interface WE OE RESET WP
Status Register
Data Comparator Write State Machine
A0~A21
Input Buffer
Y Decoder
Y-Gating
Program/Erase Voltage Switch
VPP
VCC
Main Sector 125 Boot Sector 0 Boot Sector 1 Parameter Sector Parameter Sector Parameter Sector Parameter Sector Parameter Sector Parameter Sector Main Sector 126
GND
0 1 2 3 4 5 Main Sector 0
Main Sector 1
Address Latch
X Decoder
32K-Word Main Sector x127
.......
Address Counter
.......
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PIN CONFIGURATIONS 48 TSOP (Standard Type) (12mm x 20mm)
A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE RESET VPP WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0
MX28F640C3T/B
48 Ball CSP (11 mm x 12 mm) Top View, Ball Down (Ball Pitch=0.75mm, Ball Width=0.35mm)
A1 A13 B1 A14 C1 A15 D1 A16 E1 VCCQ F1 GND
A2 A11 B2 A10 C2 A12 D2 Q14 E2 Q15 F2 Q7
A3 A8 B3 WE C3 A9 D3 Q5 E3 Q6 F3 Q13
A4 VPP B4 RESET C4 A21 D4 Q11 E4 Q12 F4 Q4
A5 WP B5 A18 C5 A20 D5 Q2 E5 Q3 F5 VCC
A6 A19 B6 A17 C6 A6 D6 Q8 E6 Q9 F6 Q10
A7 A7 B7 A5 C7 A3 D7 CE E7 Q0 F7 Q1
A8 A4 B8 A2 C8 A1 12 mm D8 A0 E8 GND F8 OE
11 mm
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Table 1. Pin Description
Symbol A0-A21 Type input Description and Function Address inputs for memory address. Data pin float to high-impedance when the chip is deselected or outputs are disable. Addresses are internally latched during a write or erase cycle. Data inputs/outputs: Inputs array data on the second CE and WE cycle during a program command. Data is internally latched. Outputs array and configuration data. The data pin float to tri-state when the chip is de-selected. Activates the device's control logic, input buffers, and sense amplifiers. CE high deselects the memory device and reduce power consumption to standby level. CE is active low. Reset Deep Power Down: when RESET=VIL, the device is in reset/deep power down mode, which drives the outputs to High Z, resets the WSM and minimizes current level. When RESET=VIH, the device is normal operation. When RESET transition the device defaults to the read array mode. Write Enable: to control write to CUI and array sector. WR=VIL becomes active. The data and address is latched WE on the rising edge of the second WE pulse. Program/Erase Power Supply:(1.65V~3.6V) Lower VPPQ0-Q15
input/output
CE
input
RESET
input
WE VPP
input input/supply
OE WP
input input
VCC VCCQ GND
supply input supply
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SECTOR STRUCTURE (TOP)
Sector Sector Size Boot Sector 0 4K Word Boot Sector 1 4K Word Parameter Sector 0 4K Word Parameter Sector 1 4K Word Parameter Sector 2 4K Word Parameter Sector 3 4K Word Parameter Sector 4 4K Word Parameter Sector 5 4K Word Main Sector 0 32K Word Main Sector 1 32K Word Main Sector 2 32K Word Main Sector 3 32K Word Main Sector 4 32K Word Main Sector 5 32K Word Main Sector 6 32K Word Main Sector 7 32K Word Main Sector 8 32K Word Main Sector 9 32K Word Main Sector 10 32K Word Main Sector 11 32K Word Main Sector 12 32K Word Main Sector 13 32K Word Main Sector 14 32K Word Main Sector 15 32K Word Main Sector 16 32K Word Main Sector 17 32K Word Main Sector 18 32K Word Main Sector 19 32K Word Main Sector 20 32K Word Main Sector 21 32K Word Main Sector 22 32K Word Main Sector 23 32K Word Main Sector 24 32K Word Main Sector 25 32K Word Main Sector 26 32K Word Main Sector 27 32K Word Main Sector 28 32K Word Main Sector 29 32K Word Main Sector 30 32K Word Address Range (h) 3FF000-3FFFFF 3FE000-3FEFFF 3FD000-3FDFFF 3FC000-3FCFFF 3FB000-3FBFFF 3FA000-3FAFFF 3F9000-3F9FFF 3F8000-3F8FFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF 3D8000-3DFFFF 3D0000-3D7FFF 3C8000-3CFFFF 3C0000-3C7FFF 3B8000-3BFFFF 3B0000-3B7FFF 3A8000-3AFFFF 3A0000-3A7FFF 398000-39FFFF 390000-397FFF 388000-38FFFF 380000-387FFF 378000-37FFFF 370000-377FFF 368000-36FFFF 360000-367FFF 358000-35FFFF 350000-357FFF 348000-34FFFF 340000-347FFF 338000-33FFFF 330000-337FFF 328000-32FFFF 320000-327FFF 318000-31FFFF 310000-317FFF 308000-30FFFF 300000-307FFF Sector Main Sector 31 Main Sector 32 Main Sector 33 Main Sector 34 Main Sector 35 Main Sector 36 Main Sector 37 Main Sector 38 Main Sector 39 Main Sector 40 Main Sector 41 Main Sector 42 Main Sector 43 Main Sector 44 Main Sector 45 Main Sector 46 Main Sector 47 Main Sector 48 Main Sector 49 Main Sector 50 Main Sector 51 Main Sector 52 Main Sector 53 Main Sector 54 Main Sector 55 Main Sector 56 Main Sector 57 Main Sector 58 Main Sector 59 Main Sector 60 Main Sector 61 Main Sector 62 Main Sector 63 Main Sector 64 Main Sector 65 Main Sector 66 Main Sector 67 Main Sector 68 Main Sector 69 Main Sector 70 Sector Size 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word Address Range (h) 2F8000-2FFFFF 2F0000-2F7FFF 2E8000-2EFFFF 2E0000-2E7FFF 2D8000-2DFFFF 2D0000-2D7FFF 2C8000-2CFFFF 2C0000-2C7FFF 2B8000-2BFFFF 2B0000-2B7FFF 2A8000-2AFFFF 2A0000-2A7FFF 298000-29FFFF 290000-297FFF 288000-28FFFF 280000-287FFF 278000-27FFFF 270000-277FFF 268000-26FFFF 260000-267FFF 258000-25FFFF 250000-257FFF 248000-24FFFF 240000-247FFF 238000-23FFFF 230000-237FFF 228000-22FFFF 220000-227FFF 218000-21FFFF 210000-217FFF 208000-20FFFF 200000-207FFF 1F8000-1FFFFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF 1D8000-1DFFFF 1D0000-1D7FFF 1C8000-1CFFFF 1C0000-1C7FFF
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Sector Main Sector 71 Main Sector 72 Main Sector 73 Main Sector 74 Main Sector 75 Main Sector 76 Main Sector 77 Main Sector 78 Main Sector 79 Main Sector 80 Main Sector 81 Main Sector 82 Main Sector 83 Main Sector 84 Main Sector 85 Main Sector 86 Main Sector 87 Main Sector 88 Main Sector 89 Main Sector 90 Main Sector 91 Main Sector 92 Main Sector 93 Main Sector 94 Main Sector 95 Main Sector 96 Main Sector 97 Main Sector 98 Main Sector 99 Main Sector 100 Main Sector 101 Main Sector 102 Main Sector 103 Main Sector 104 Main Sector 105 Main Sector 106 Main Sector 107 Main Sector 108 Main Sector 109 Main Sector 110 Sector Size 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word Address Range (h) 1B8000-1BFFFF 1B0000-1B7FFF 1A8000-1AFFFF 1A0000-1A7FFF 198000-19FFFF 190000-197FFF 188000-18FFFF 180000-187FFF 178000-17FFFF 170000-177FFF 168000-16FFFF 160000-167FFF 158000-15FFFF 150000-157FFF 148000-14FFFF 140000-147FFF 138000-13FFFF 130000-137FFF 128000-12FFFF 120000-127FFF 118000-11FFFF 110000-117FFF 108000-10FFFF 100000-107FFF 0F0000-0FFFFF 0F0000-0F7FFF 0E8000-0EFFFF 0E0000-0E7FFF 0D8000-0DFFFF 0D0000-0D7FFF 0C8000-0CFFFF 0C0000-0C7FFF 0B8000-0BFFFF 0B0000-0B7FFF 0A8000-0AFFFF 0A0000-0A7FFF 098000-09FFFF 090000-097FFF 088000-08FFFF 080000-087FFF Sector Sector Size Main Sector 111 32K Word Main Sector 112 32K Word Main Sector 113 32K Word Main Sector 114 32K Word Main Sector 115 32K Word Main Sector 116 32K Word Main Sector 117 32K Word Main Sector 118 32K Word Main Sector 119 32K Word Main Sector 120 32K Word Main Sector 121 32K Word Main Sector 122 32K Word Main Sector 123 32K Word Main Sector 124 32K Word Main Sector 125 32K Word Main Sector 126 32K Word Address Range (h) 078000-07FFFF 070000-077FFF 068000-06FFFF 060000-067FFF 058000-05FFFF 050000-057FFF 048000-04FFFF 040000-047FFF 038000-03FFFF 030000-037FFF 028000-02FFFF 020000-027FFF 018000-01FFFF 010000-017FFF 008000-00FFFF 000000-007FFF
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SECTOR STRUCTURE (BOTTOM)
Sector Sector Size Boot Sector 0 4K Word Boot Sector 1 4K Word Parameter Sector 0 4K Word Parameter Sector 1 4K Word Parameter Sector 2 4K Word Parameter Sector 3 4K Word Parameter Sector 4 4K Word Parameter Sector 5 4K Word Main Sector 0 32K Word Main Sector 1 32K Word Main Sector 2 32K Word Main Sector 3 32K Word Main Sector 4 32K Word Main Sector 5 32K Word Main Sector 6 32K Word Main Sector 7 32K Word Main Sector 8 32K Word Main Sector 9 32K Word Main Sector 10 32K Word Main Sector 11 32K Word Main Sector 12 32K Word Main Sector 13 32K Word Main Sector 14 32K Word Main Sector 15 32K Word Main Sector 16 32K Word Main Sector 17 32K Word Main Sector 18 32K Word Main Sector 19 32K Word Main Sector 20 32K Word Main Sector 21 32K Word Main Sector 22 32K Word Main Sector 23 32K Word Main Sector 24 32K Word Main Sector 25 32K Word Main Sector 26 32K Word Main Sector 27 32K Word Main Sector 28 32K Word Main Sector 29 32K Word Main Sector 30 32K Word Address Range (h) 000000-000FFF 001000-001FFF 002000-002FFF 003000-003FFF 004000-004FFF 005000-005FFF 006000-006FFF 007000-007FFF 008000-00FFFF 010000-017FFF 018000-01FFFF 020000-027FFF 028000-02FFFF 030000-037FFF 038000-03FFFF 040000-047FFF 048000-04FFFF 050000-057FFF 058000-05FFFF 060000-067FFF 068000-06FFFF 070000-077FFF 078000-07FFFF 080000-087FFF 088000-08FFFF 090000-097FFF 098000-09FFFF 0A0000-0A7FFF 0A8000-0AFFFF 0B0000-0B7FFF 0B8000-0BFFFF 0C0000-0C7FFF 0C8000-0CFFFF 0D0000-0D7FFF 0D8000-0DFFFF 0E0000-0E7FFF 0E8000-0EFFFF 0F0000-0F7FFF 0F8000-0FFFFF Sector Main Sector 31 Main Sector 32 Main Sector 33 Main Sector 34 Main Sector 35 Main Sector 36 Main Sector 37 Main Sector 38 Main Sector 39 Main Sector 40 Main Sector 41 Main Sector 42 Main Sector 43 Main Sector 44 Main Sector 45 Main Sector 46 Main Sector 47 Main Sector 48 Main Sector 49 Main Sector 50 Main Sector 51 Main Sector 52 Main Sector 53 Main Sector 54 Main Sector 55 Main Sector 56 Main Sector 57 Main Sector 58 Main Sector 59 Main Sector 60 Main Sector 61 Main Sector 62 Main Sector 63 Main Sector 64 Main Sector 65 Main Sector 66 Main Sector 67 Main Sector 68 Main Sector 69 Main Sector 70 Sector Size 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word Address Range (h) 100000-107FFF 108000-10FFFF 110000-117FFF 118000-11FFFF 120000-127FFF 128000-12FFFF 130000-137FFF 138000-13FFFF 140000-147FFF 148000-14FFFF 150000-157FFF 158000-15FFFF 160000-167FFF 168000-16FFFF 170000-177FFF 178000-17FFFF 180000-187FFF 188000-18FFFF 190000-197FFF 198000-19FFFF 1A0000-1A7FFF 1A8000-1AFFFF 1B0000-1B7FFF 1B8000-1BFFFF 1C0000-1C7FFF 1C8000-1CFFFF 1D0000-1D7FFF 1D8000-1DFFFF 1E0000-1E7FFF 1E8000-1EFFFF 1F0000-1F7FFF 1F8000-1FFFFF 200000-207FFF 208000-20FFFF 210000-217FFF 218000-21FFFF 220000-227FFF 228000-22FFFF 230000-237FFF 238000-23FFFF
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Sector Main Sector 71 Main Sector 72 Main Sector 73 Main Sector 74 Main Sector 75 Main Sector 76 Main Sector 77 Main Sector 78 Main Sector 79 Main Sector 80 Main Sector 81 Main Sector 82 Main Sector 83 Main Sector 84 Main Sector 85 Main Sector 86 Main Sector 87 Main Sector 88 Main Sector 89 Main Sector 90 Main Sector 91 Main Sector 92 Main Sector 93 Main Sector 94 Main Sector 95 Main Sector 96 Main Sector 97 Main Sector 98 Main Sector 99 Main Sector 100 Main Sector 101 Main Sector 102 Main Sector 103 Main Sector 104 Main Sector 105 Main Sector 106 Main Sector 107 Main Sector 108 Main Sector 109 Main Sector 110 Sector Size 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word Address Range (h) 240000-247FFF 248000-24FFFF 250000-257FFF 258000-25FFFF 260000-267FFF 268000-26FFFF 270000-277FFF 278000-27FFFF 280000-287FFF 288000-28FFFF 290000-297FFF 298000-29FFFF 2A0000-2A7FFF 2A8000-2AFFFF 2B0000-2B7FFF 2B8000-2BFFFF 2C0000-2C7FFF 2C8000-2CFFFF 2D0000-2D7FFF 2D8000-2DFFFF 2E0000-2E7FFF 2E8000-2EFFFF 2F0000-2F7FFF 2F8000-2FFFFF 300000-307FFF 308000-30FFFF 310000-317FFF 318000-31FFFF 320000-327FFF 328000-32FFFF 330000-337FFF 338000-33FFFF 340000-347FFF 348000-34FFFF 350000-357FFF 358000-35FFFF 360000-367FFF 368000-36FFFF 370000-377FFF 378000-37FFFF Sector Main Sector 111 Main Sector 112 Main Sector 113 Main Sector 114 Main Sector 115 Main Sector 116 Main Sector 117 Main Sector 118 Main Sector 119 Main Sector 120 Main Sector 121 Main Sector 122 Main Sector 123 Main Sector 124 Main Sector 125 Main Sector 126 Sector Size 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word 32K Word Address Range (h) 380000-387FFF 388000-38FFFF 390000-397FFF 398000-39FFFF 3A0000-3A7FFF 3A8000-3AFFFF 3B0000-3B7FFF 3B8000-3BFFFF 3C0000-3C7FFF 3C8000-3CFFFF 3D0000-3D7FFF 3D8000-3DFFFF 3E0000-3E7FFF 3E8000-3EFFFF 3F0000-3F7FFF 3F8000-3FFFFF
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2 PRINCIPLES OF OPERATION
The product includes an on-chip WSM to manage sector erase, word write and lock-bit configuration functions. After initial device power-up or return from reset mode (see section on Bus Operations), the device defaults to read array mode. Manipulation of external memory control pins allow array read, standby and output disable operations. Status register and identifier codes can be accessed through the CUI independent of the VPP voltage. All functions associated with altering memory contents-sector erase, word write, sector lock/unlock, status and identifier codes - are accessed via the CUI and verified through the status register. Commands are written using standard microprocessor write timings. The CUI contents serve as input to the WSM, which controls the sector erase, word write and sector lock/unlock. The internal algorithms are regulated by the WSM, including pulse repetition, internal verification and margining of data. Addresses and data are internally latched during write cycles. Address is latched at falling edge of CE and data latched at rising edge of WE. Writing the appropriate command outputs array data, accesses the identifier codes or outputs status register data. Interface software that initiates and polls progress of sector erase, full chip erase, word write and sector lock/ unlock can be stored in any sector. This code is copied to and executed from system RAM during flash memory updates. After successful completion, reads are again possible via the Read Array command. Sector erase suspend allows system software to suspend a sector erase to read/write data from/to sectors other than that which is suspend. Word write suspend allows system software to suspend a word write to read data from any other flash memory array location. With the mechanism of sector lock, memory contents cannot be altered due to noise or unwanted operation. When RESET=VIH and VCC3 BUS OPERATION
The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles.
3.1 Read
Information can be read from any sector, configuration codes or status register independent of the VPP voltage. RESET can be at VIH. The first task is to write the appropriate read mode command (Read Array, Read Configuration, Read Query or Read Status Register) to the CUI. Upon initial device power-up or after exit from reset mode, the device automatically resets to read array mode. In order to read data, control pins set for CE, OE, WE, RESET and WP must be driven to active. CE and OE must be active to obtain data at the outputs. CE is the device selection control. OE is the data output (Q0-Q15) control and active drives the selected memory data onto the I/O bus, WE must be VIH, RESET must be VIH, WP must be at VIL or VIH.
3.2 Output Disable
With OE at a logic-high level (VIH), the device outputs are disabled. Output pins (Q0-Q15) are placed in a highimpedance state.
3.3 Standby
CE at a logic-high level (VIH) places the device in standby mode which substantially reduces device power consumption. Q0~Q15 outputs are placed in a high-impedance state independent of OE. If deselected during sector erase, word write or sector lock/unlock, the device continues functioning, and consuming active power until the operation completes.
3.4 Reset
As RESET=VIL, it initiates the reset mode. The device enters reset/deep power down mode. However, the data stored in the memory has to be sustained at least 100ns in the read mode before the device becomes deselected
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and output high impedance state. In read modes, RESET-low deselects the memory, places output drivers in a high-impedance state and turns off all internal circuits. RESET must be held low for a minimum of 100ns. Time tPHQV is required after return from reset mode until initial memory access outputs are valid. After this wake-up interval tPHEL or tPHWL, normal operation is restored. The CUI is reset to read array mode and status register is set to 80H. Sector lock bit is set at lock status. During sector erase, word write or sector lock/unlock modes, RESET-low will abort the operation. Memory contents being altered are no longer valid; the data may be partially erased or written. In addition, CUI will go into either array read mode or erase/write interrupted mode. When power is up and the device reset subsequently, it is necessary to read status register in order to assure the status of the device. Recognizing status register (SR.7~0) will assure if the device goes back to normal reset and enters array read mode. mands require the command and address within the device or sector within the device (Sector Lock) to be locked. The Clear Sector Lock-Bits command requires the command and address within the device. The CUI does not occupy an addressable memory location. It is written when WE and CE are active (whichever goes high first). The address and data needed to execute a command are latched on the rising edge of WE or CE. Standard microprocessor write timings are used.
3.5 Read Configuration Codes
The read configuration codes operation outputs the manufacturer code, device code, sector lock configuration codes, and the protection register Using the manufacturer and device codes, the system CPU can automatically match the device with its proper algorithms. The sector lock codes identify locked and unlocked sectors.
3.6 Write
Writing commands to the CUI enable reading of device data and identifier codes. They also control inspection and clearing of the status register. When VCC=2.7V-3.6V and VPP=VPPH1/2, the CUI additionally controls sector erase, full chip erase, word write and sector lock/ unlock. The Sector Erase command requires appropriate command data and an address within the sector to be erased. The Full Chip Erase command requires appropriate command data and an address within the device. The Word Write command requires the command and address of the location to be written. Set Sector lock/unlock com-
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4 COMMAND DEFINITIONS
When the VPP voltage < VPPLK, read operations from the status register, identifier codes, or sectors are enabled. Placing VPP on VPPH1/2 enables successful sector erase, full chip erase, word write and sector lock/ unlock. Device operations are selected by writing specific commands into the CUI. Table 3 defines these commands.
Table 2. Bus Operation
Mode Read Output Disable Standby Reset Write
1,2
Notes 1,2 2 2 2 2,3,4,5
RESET VIH VIH VIH VIL VIH
CE VIL VIL VIH X VIL
OE VIL VIH X X VIH
WE VIH VIH X X VIL
Q0~Q15 DOUT High Z High Z High Z DIN
Notes: 1. Refer to DC Characteristics for VPPLK, VPP1, VPP2, VPP3 voltage. 2. X can be VIL or VIH for pin and addresses. 3. RESET at GND0.2 to ensure the lowest power consumption. 4. Refer to Table 3 for valid DIN during a write operation. 5. To program or erase the lockable sectors holds WP at VIH.
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Table 3. Command Definition (1)
Command Bus Cycles Required Read Array Read Configuration Read Query Read Status Register Clear Status Register Sector Erase/Confirm Word Write Program/Erase Suspend Program/Erase Resume Sector Lock Sector Unlock Lock-Down Sector Protection Program 1 >2 2 2 1 2 2 1 1 2 2 2 2 6 5 3,4 2,7 3 3 Notes (1) Write Write Write Write Write Write Write Write Write Write Write Write Write First Bus Cycle Operation Address (2) X X X X X X X X X X X X X Data (3) FFH 90H 98H 70H 50H 20H 40H/10H B0H D0H 60H 60H 60H C0H Write Write Write Write BA BA BA PA 01H D0H 2FH PPH Write Write BA WA D0H WD Read Read Read IA QA X ID QD SRD Second Bus Cycle Operation Address (1) (2) Data (3)
Notes: 1. Bus operation are defined in Table 2 and referred to AC Timing Waveform. 2. X=Any address within device IA=ID-Code Address (refer to Table 4) BA=Sector within the sector being erased WA=Address of memory location to be written QA=Query Address, QD=Query Data 3. Data is latched from the rising edge of WE or CE (whichever goes high first) SRD=Data read from status register, see Table 6 for description of the status register bits. WD=Data to be written at location WA. ID=Data read from identifier codes 4. Following the Read configuration codes command, read operation access manufacturer, device codes, sector lock/unlock codes, see chapter 4.2. 5. Either 40H or 10H are recognized by the WSM as word write setup. 6. The sector unlock operation simultaneously clear all sector lock. 7. Read Query Command is read for CFI query information.
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4.1 Read Array Command
Upon initial device power-up and after exit from reset mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal WSM has started a sector erase, word write or sector lock configuration the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via a Sector Erase Suspend or Word Write Suspend command. If RESET=VIL device is in read Read Array command mode, this read operation no longer requires VPP. The Read Array command functions independently of the VPP voltage and RESET can be VIH.
4.3 Read Status Register Command
CUI writes read status command (70H). The status register may be read to determine when a sector erase, word write or lock-bit configuration is complete and whether the operation completed successfully. (refer to table 6) It may be read at any time by writing the Read Status Register command. After writing this command, all subsequent read operations output data from the status register until another valid command is written. The status register contents are latched on the falling edge of CE or OE, whichever occurs. CE or OE must toggle to VIH before further reads to update the status register latch. The Read Status Register command functions independently of the VPP voltage. RESET can be VIH.
4.4 Clear Status Register Command 4.2 Read Configuration Codes Command
The configuration code operation is initiated by writing the Read Configuration Codes command (90H). To return to read array mode, write the Read Array Command (FFH). Following the command write, read cycles from addresses shown in Table 4 retrieve the manufacturer, device, sector lock configuration codes (see Table 4 for configuration code values). To terminate the operation, write another valid command. Like the Read Array command, the Read Configuration Codes command functions independently of the VPP voltage and RESET can be VIH. Following the Read Configuration Codes command, the information is shown: Status register bits SR.5, SR.4, SR.3 or SR.1 are set to "1"s by the WSM and can only be reset by the Clear Status Register command (50H). These bits indicate various failure conditions (see Table 6). By allowing system software to reset these bits, several operations (such as cumulatively erasing multiple sectors or writing several words in sequence) may be performed. The status register may be polled to determine if an error occurred during the sequence. To clear the status register, the Clear Status Register command (50H) is written on CUI. It functions independently of the applied VPP Voltage. RESET can be VIH. This command is not functional during sector erase or word write suspend modes.
Table 4: ID Code
Code Manufacturer Code Device Code - Sector is unlocked - Sector is locked - Sector is locked-down Protection Register Lock Protection Register 80 81-88 Address (A19-A0) 00000H 00001H Data (Q15-Q0) 00C2H 88CC/88CDH LocK Q0=0 Q0=1 Q1=1 PR-LK PR
Sector Lock Configuration XX002H
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4.5 Sector Erase Command
Erase is executed one sector at a time and initiated by a two-cycle command. A sector erase setup is first written (20H), followed by a sector erase confirm (D0H). This command sequence requires appropriate sequencing and an address within the sector to be erased. Sector preconditioning, erase, and verify are handled internally by the WSM. After the two-cycle sector erase sequence is written, the device automatically outputs status register data when read (see Figure 8). The CPU can detect sector erase completion by analyzing the output data of the status register bit SR.7. When the sector erase is complete, status register bit SR.5 should be checked. If a sector erase error is detected, the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode until a new command is issued. This two-step command sequence of set-up followed by execution ensures that sector contents are not accidentally erased. An invalid sector Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Also, reliable sector erasure can only occur when 2.7V~3.6V and VPP=VPPH1/2. In the absence of this high voltage, sector contents are protected against erasure. If sector erase is attempted while VPP4.7 Sector Erase Suspend Command
The Sector Erase Suspend command (50H) allows sector-erase interruption to read or word write data in another sector of memory. Once the sector erase process starts, writing the Sector Erase Suspend command requests that the WSM suspend the sector erase sequence at a predetermined point in the algorithm. The device outputs status register data when read after the Sector Erase Suspend command is written. Polling status register bits SR.7 and SR.6 can determine when the sector erase operation has been suspended (both will be set to "1"). Specification tWHR12 defines the sector erase suspend latency. When Sector Erase Suspend command write to the CUI, if sector erase was finished, the device places read array mode. Therefore, after Sector Erase Suspend command write to the CUI, Read Status Register command (70H) has to write to CUI, then status register bit SR.6 should be checked for placing the device in suspend mode. At this point, a Read Array command can be written to read data from sectors other than that which is suspended. A Word Write commands sequence can also be issued during erase suspend to program data in other sectors. Using the Word Write Suspend command (see Section 4.9), a word write operation can also be suspended. During a word write operation with sector erase suspended, status register bit SR.7 will return to "0".
4.6 Word Write Command
Word write is executed by a two-cycle command sequence. Word write setup (standard 40H or alternate 10H) is written, followed by a second write that specifies the address and data. The WSM then takes over, controlling the word write and write verify algorithms internally. After the word write sequence is written, the device automatically outputs status register data when read (see Figure 6). The CPU can detect the completion of the word write event by analyzing the status register bit SR.7. When word write is complete, status register bit SR.4
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However, SR.6 will remain "1" to indicate sector erase suspend status. The only other valid commands while sector erase is suspended are Read Status Register and sector erase Resume. After a Sector Erase Resume command is written to the flash memory, the WSM will continue the sector erase process. Status register bits SR.6 and SR.7 will automatically clear. After the Erase Resume command is written, the device automatically outputs status register data when read (see Figure 4). VPP must remain at VPPH1/2 while sector erase is suspended. RESET must also remain at VIL or VHH (the same RESET level used for sector erase). WP must also remain at VIL or VIH (the same WP level used for sector erase). Sector cannot resume until word write operations initiated during sector erase suspend has completed. If the time between writing the Sector Erase Resume command and writing the Sector Erase Suspend command is shorter than 15ms and both commands are written repeatedly, a longer time is required than standard sector erase until the completion of the operation. to the flash memory, the WSM will continue the Word write process. Status register bits SR.2 and SR.7 will automatically clear. After the Word Write Resume command is written, the device automatically outputs status register data when read (see Figure 4). VPP must remain at VPPH1/2 while in word write suspend mode. RESET must also remain at VIL or VHH (the same RESET level used for word write). If the time between writing the Word Write Resume command and writing the Word Write Suspend command is short and both commands are written repeatedly, a longer time is required than standard word write until the completion of the operation.
4.8 Word Write Suspend Command
The Word Write Suspend command allows word write interruption to read data in other flash memory locations. Once the word write process starts, writing the Word Write Suspend command requests that the WSM suspend the Word write sequence at a predetermined point in the algorithm. The device continues to output status register data when read after the Word Write Suspend command is written. Polling status register bits SR.7 and SR.2 can determine when the word write operation has been suspended (both will be set to "1"). Specification tWHR11 defines the word write suspend latency. When Word Write Suspend command write to the CUI, if word write was finished, the device places read array mode. Therefore, after Word Write Suspend command write to the CUI, Read Status Register command (70H) has to write to CUI, then status register bit SR.2 should be checked for placing the device in suspend mode. At this point, a Read Array command can be written to read data from locations other than that which is suspended. The only other valid commands while word write is suspended are Read Status Register and Word Write Resume. After Word Write Resume command is written
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4.9 Sector Lock/Unlock /Lock-down Command 4.9.1 Sector Locked State
The default status of all sectors when power-up or reset is locked. Any attempt on program or erase operations will result in an error on bit SR.1 of a locked sector. The status of a locked sector can be changed to unlocked or lock-down using software commands. An unlocked sector can be locked by writing the sector lock command sequence, 60H followed by 01H.
4.9.4 Read Sector Lock Status
The lock status of every sector can be read through Read Configuration mode. To enter this mode first command write 90H to the device. The next sector reads at address +00002 will output the lock status of this sector. The lock status can be read from the lowest two output pins Q0 and Q1. Q0, Q0 indicates the sector lock/ unlock status and set by the lock command and cleared by the unlock command. When entering lock-down, the lock status is automatically set. Q1 indicates lock-down status and is set by the lock-down command. It cannot be further cleared by software, only by device reset or power-down.
4.9.2 Sector Unlocked State
An unlocked sector can be programmed or erased. All unlocked sector return to the locked state when the device is either reset or powered down. The status of an unlocked sector can be changed to locked or lockeddown using software commands. A locked sector can be unlocked by writing unlock command sequence, 60H followed by D0H.
Sector Lock Configuration Table Lock Status Sector is unlocked Sector is locked Sector is locked-down Data Q0=0 Q0=1 Q1=1
4.9.3 Sector Locked-Down State
Sectors which are locked-down are protected from program and erase operation; however, the protection status of three sectors cannot be changed using software commands alone. Any sector locked or unlocked can be locked-down by writing the lock-down command sequence, 60H followed by 2FH. When the device is reset or powered down, the locked-down sectors will revert to the locked state. The status of WP will determine the function of sector lock-down and is summarized is followed: WP WP=0 WP=1 Sector Lock-down Description - sectors are protected from program, erase, and lock status changes - the sector lock-down function is disabled - an individual lock-down sector can be un locked and relocked via software command. Once WP goes low, sectors that previously locked-down returns to lock-down state regardless of any changes when WP was high.
In addition, sector lock-down is cleared only when the device is reset or powered down.
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4.9.5 Sector Locking while Erase Suspend
The sector lock status can be performed during an erase suspend by using standard locking command sequences to unlock, lock, or lock-down a sector. In order to change sector locking during an erase operation, the write erase suspend command (B0H) is placed first; then check the status register until it is shown that the actual erase operation has been suspended. Subsequent writing the desired lock command sequence to a sector and the lock status will be changed. When completing any desired lock, read or program operation, resume the erase operation with the Erase Resume Command (D0H). If a sector is locked or locked-down during the same sector is being placed in erase suspend, the locking status bits will be changed immediately, but when the erase is resumed, the erase operation will complete. Locking operation cannot be performed during a program suspend.
4.9.6 Status Register Error Checking
The operation of locking system for this device can be used the term "state (X,Y,Z)" to specify locking status, where X=value of WP, Y=bit Q1 of the sector lock status register, and Z=bit Q0 of the sector lock status register. Q0 indicates if a sector is locked (1) or unlocked (0). Q1 indicates if a sector has been locked-down(1) or not (0).
Table 5. Sector Locking State Transitions
Current State (X, Y, Z)= WP 0 0 0 1 1 1 1 Q1 0 0 1 0 0 1 1 Q0 0 1 1 0 1 0 1 Name Unlocked Locked (Default) Locked-Down Unlocked Locked Lock-Down Disabled Lock-Down Disabled Erase/Prog. Operation if Enable ? Yes No No Yes No Yes No Lock (001) Unchanged Unchanged (101) Unchanged (111) Unchanged Lock Command Input Result (Next State) (X, Y, Z)= Unlock Unchanged (000) Unchanged Unchanged (100) Unchanged (110) Lock-Down (011) (011) Unchanged (111) (111) (111) Unchanged
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Table 6. Status Register Definition
WSMS 7 BESS 6 ES 5 PS 4 VPPS 3 PSS 2 BLS 1 R 0
SR.7 = WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy SR.6 = SECTOR ERASE SUSPEND STATUS (ESS) 1 = Sector ERASE Suspended 0 = Sector Erase in Progress/Completed SR.5 = ERASE STATUS (ES) 1 = Error in Programming 0 = Successful Sector Erase or Clear Sector LockBits SR.4 = PROGRAM STATUS (PS) 1 = Error in Programming 0 = Successful Programming SR.3 = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK SR.2 = PROGRAM SUSPEND STATUS (PSS) 1 = Program Suspended 0 = Program in Progress/Completed SR.1 = SECTOR LOCK STATUS 1 =Program/Erase attempted an a locked sector; operation aborted 0 = No operation to locked sectors SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R)
NOTES: Check WSM bit first to determine word program or sector Erase completion, before checking Program or Erase Status bits. When Erase Suspend is issued, WSM halts execution and sets both WSMs and ESS bits to "1". ESS bit remains set to "1" until an Erase Resume command is issued. When this bit (SR.5) is set to "1", it means WSM is unable to verify successful sector erasure. When this bit is set to "1", WSM has attempted but failed to program a word.
SR.3 bit is not guaranteed to report accurate feedback between VPPLK and VPP min. When program suspend is issued, WSM halts the execution and sets both WSMs and SR.2 bit to "1". SR.2 remains set to "1" until a Program Resume command is issued. If a program or erase operation is attempted to one of the locked sectors, this bit is set by the WSM. The operation specified is aborted and the device is returned to read status mode. SR. 0 is reserved for future use and should be masked out when polling the status register.
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5. 128-Bit Protection Register
The 128-bits of protection register are divided into two 64-bit segments. One of the segments is programmed at MXIC side with unique 64-bit number; where changes are forbidden. The other segment is left empty for customer to program. Once the customer segment is programmed, it can be locked to prevent further reprogramming. read cycles from addresses shown in Table 7 will retrieve the specified information. To return to read array mode, write the Read Array Command (FFH). Two-cycle Protection Program Command is used to program protection register bits. The 64-bit register is programmed 16-bits at a time. First write C0H protection program setup. The next write to the device will latch in address and data and program the specified location. The allowable address are also show in Table 7. Refer to Figure 6 for the Protection Register Programming Flowchart. Any attempt to address Protection Program command onto undefined protection register address space will result in a Status Register error (SR.4 set to "1"). In addition, attempting to program or to previously locked protection register segment will result in a status register error (SR.4=1, SR.1=1).
5.1 Protection Register Read & Programming
The protection register is read in the configuration read mode, which follows the stated Command Bus Definitions. The device is switched to this read mode by writing the Read Configuration command (90H). Once this mode,
Table 7. Word-Wide Protection Register Addressing
Word Lock 0 1 2 3 4 5 6 7 User Both Factory Factory Factory Factory Customer Customer Customer Customer A7 1 1 1 1 1 1 1 1 1 A6 0 0 0 0 0 0 0 0 0 A5 0 0 0 0 0 0 0 0 0 A4 0 0 0 0 0 0 0 0 0 A3 0 0 0 0 0 0 0 0 1 A2 0 0 0 0 1 1 1 1 0 A1 0 0 1 1 0 0 1 1 0 A0 0 1 0 1 0 1 0 1 0
Notes: 1. Set address bit A21-A15=1 for TOP Boot device. 2. Set address bit A21-A15=0 for Bottom Boot device. 3. The address not specified in above are don't care.
5.2 Protection Register Locking
The user-programmable segment of the protection register is lockable by programming Bit 1 of the PR-Lock location to 0. Bit 0 of this location is programmed to 0 at MXIC to protect the unique device number. This bit is set using the unique device number. This bit is set using the protection program command to program "FFFD" to PR-LOCK location. After these bits have been programmed, no further changes can be made to the value stored in the protection register. Protection program command to a locked section will result in a status register error (Program Error bit SR.4 and Lock Error bit SR.1 will be set to 1). Protection register lockout state is not reversible.
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Table 8. Protection Register Memory Map
Protection Register Bit Address 88H~85H 84H~81H 80H(Bit0 & Bit1) Purpose 4 word user program Register 4 word factory program Register Protection Register Lock (PR-Lock)
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6 ELECTRICAL SPECIFICATIONS 6.1 ABSOLUTE MAXIMUM RATINGS
Operating Temperature During Read, Sector Erase, Word Write . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC Storage Temperature . . . . . . . . . . . . . .-65oC to +125oC Voltage on Any Pin (except VCC and VPP with respect to GND) . . . . . . . . . . .-0.5 V to +5V(1) VCC Supply Voltage . . . . . . . . . . . . .-0.2V to +4.6V(2) VPP Supply Voltage (for sector erase and VPP with respect to GND) . . . . . . . .-0.5V to +4.6V(1,2) VCC and VCCQ Supply Voltage with respect to GND. . . . . . . . . . . . . . . . .-0.2V to +3.6V(1) Output Short Circuit Voltage . . . . . . . . . . . . .100mA WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may affect device reliability. 1. Minimum DC voltage is -0.5V on input pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input/output pins to VCC+0.5V which during transition; may overshoot to VCC+2.0V for periods <20ns. 2. Output shorted for no more than one second. No more than one output shorted at a time.
6.2 Operating Conditions (Temperature and VCC Operating Conditions)
Symbol TA VCC1 VCCQ1 VPP1 Cycling Parameter Operating Temperature VCC Supply Voltage I/O Supply Voltage Supply Voltage Sector Erase Cycling Min. -40 2.7 2.7 1.65 100,000 Max. +85 3.6 3.6 3.6 Unit
o
Notes 1 1 1 2
C
V V V
NOTE: 1.VCC and VCCQ must share the same supply when they are in the VCC1 range.
6.2.1 Capacitance (1) (TA=+25oC, f=1MHz)
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Typ. 6 10 Max. 8 12 Unit pF pF Test Condition VIN=0.0V VOUT=0.0V
NOTE: 1. Sampled, not 100% tested.
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6.2.2 AC Input/Output Test Conditions
VCCQ Input VCCQ/2 0.0
Note:AC test inputs are driven at VCCQ/2 for a Logic "1" and 0.0V for a Logic "0".
TEST POINTS
VCCQ/2 Output
Figure 1. Transient Input/Output Reference Waveform
Figure 2. SWITCHING TEST CIRCUITS
TEST SPECIFICATIONS Test Condition 90 120 Output Load 1 TTL gate Output Load Capacitance, CL 30 100 (including jig capacitance) Input Rise and Fall Times 5 Input Pulse Levels 0.0-3.0 Input timing measurement 1.5 reference levels Output timing measurement 1.5 reference levels Unit pF ns V V V
DEVICE UNDER TEST
2.7K ohm 3.3V
CL
6.2K ohm
DIODES=IN3064 OR EQUIVALENT
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6.2.3 AC Characteristic -- Read Only Operation (1)
-90 Sym. tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ tOH Parameter Read Cycle Time Address to Output Delay CE to Output Delay OE to Output Delay RESET to Output Delay CE to Output in Low Z OE to Output in Low Z CE to Output in High Z OE to Output in High Z Output Hold from Address, CE, or OE Change, Whichever Occurs First Notes: 1. See AC Waveform: Read Operations. 2. OE may be delayed up to tELQV-tGLQV after the falling edge of CE without impact on tELQV. 3. Sampled, but not 100% tested. 4. See test Configuration. 3 3 3 3 3 0 0 0 20 20 0 2 2 Notes Min. 90 90 90 30 150 0 0 20 20 Max. 110 110 110 30 150 -110 Min. Max. Unit ns ns ns ns ns ns ns ns ns ns
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Figure 3. READ-ONLY OPERATION AC WAVEFORM
Device and Address Selection Address Stable tAVAV Data Valid
Standby
Addresses(A)
VIH VIL
CE (E)
VIH VIL tEHQZ
OE (G)
VIH VIL tGHQZ
WE (W)
VIH VIL tGLQV tGLQX tELQV tOH
VOH
tELQX High Z Valid Output tAVQV High Z
DATA (Q)
VOL
RESET (P)
VIH VIL
tPHQV
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6.2.5 AC Characteristic -- Write Operation
-90 Sym. tPHWL/tPHEL tELWL/tWLEL tELEH/tWLWH tDVWH/tDVEH tAVWH/tAVEH tWHDX/tEHDX tWHAX/tEHAX tWHWL/tEHEL tVPWH/tVPEH tQVVL tBHWH/tBHEH tQVBL tWHGL Parameter RESET High Recovery to WE(CE) Going Low CE(WE) Setup to WE(CE) Going Low WE(CE) Pulse Width Data Setup to WE(CE) Going High Address Setup to WE(CE) Going High Data Hold Time from WE(CE) High Address Hold Time from WE(CE) High WE(CE) Pulse Width High VPP Setup to WE(CE) Going High VPP Hold from Valid SRD WP Setup to WE(CE) Going High WP Hold from Valid SRD WE High to OE Going Low 4 2 2 2 2 4 3 3 3 3 3 Note Min. 150 0 50 50 50 0 0 0 30 200 0 0 0 30 -110 Min. 150 0 70 60 70 0 0 0 30 200 0 0 0 30 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tWHEH/tEHWH CE(WE) Hold Time from WE(CE) High
Notes: 1. Write timing characteristics during erase suspend are the same as during write-only operations. 2. Refer to Table 5 for valid AIN or DIN. 3. Sampled, not 100% tested. 4. Write pulse width (tWP) is defined from CE or WE going low (whichever goes low last) to CE or WE going high (whichever goes high first). Hence, tWP=tWLWH=tELEH=tELWH. Similarly, Write pulse width high (tWPH) is defined from CE or WE going high (whichever goes high first) to CE or WE going low (whichever goes low first). Hence, tWPH=tWHWL=tEHEL=tEHWL. 5. See Test Configuration. 6. Vcc Max = 3.3V.
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Figure 4. PROGRAM AND ERASE OPERATION AC WAVEFORM
A
Address (A)
VIH VIL
B
AIN
C
AIN
tAVWH (tAVEH)
D
E
F
tWHAX (tEHAX)
(Note 1)
VIH
CE(WE)[E(W)]
VIL tELWL (tWLEL) VIH tWHEH (tEHWH) tWHWL (tEHEL) tWHGL (Note 1)
OE(G)
VIL Disable VIH
WE,(CE)[W(E)]
Enable VIL tELEH (tWLWH) tDVWH (tEVEH) tWHDX (tEHDX)
VIH High Z
DATA[Q]
VIL tPHWL (tPHEL) VOH
DIN
DIN
Valid SRD
DIN
RESET[P]
VOL tBHWH (tBHEH) VIH tQVBL
WP
VIL tVPWH (tVPEH) tQVVL
VPPH1
VPP[V]
VPPLK VIL
Notes: 1. CE must be toggled low when reading Status Register Data. WE must be inactive (high) when reading Status Register Data. A. VCC Power-Up and Standby. B. Write Program or Erase Setup Command. C. Write Valid Address and Data (for Program) or Erase Confirm Command. D. Automated Program or Erase Delay. E. Read Status Register Data (SRD): reflects completed program/erase operation. F. Write Read Array Command.
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6.2.5 Erase and Program Timing (1)
Vpp Symbol tBWPB tBWMB tWHQV1/ tEHQV1 tWHQV2/ tEHQV2 tWHQV3/ tEHQV3 tWHRH1/ tEHRH1 tWHRH2/ tEHRH2 Notes: 1. Typical values measured at TA=+25C and nominal voltage. 2. Excludes external system-level overhead. 3. Sampled, but not 100% tested. Erase Suspend Latency 3 5 20 us 4-KW Parameter Sector Erase Time 32-KW Main Sector Erase Time Program Suspend Latency 3 5 16 us 2,3 1 5 s 2,3 0.5 4 s Parameter 4-KW Parameter Sector Word Program Time(Word) 32-KW Main Sector Word Program Time Word Program Time 2,3 12 200 us 2,3 0.8 2.4 s Note 2,3 1.65V-3.6V Typ(1) 0.10 Max 0.30 Unit s
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Figure 5. RESET WAVEFORM
VIH
RESET (P)
VIL tPLPH
tPHQV tPHWL tPHEL
(A) Reset during Read Mode
Abort Complete tPHQV tPHWL tPHEL
tPLRH
RESET (P)
VIH VIL tPLPH
(B) Reset during Program or Sector Erase, tPLPH < tPLRH
Abort Complete tPLRH VIH
Deep PowerDown
tPHQV tPHWL tPHEL
RESET (P)
VIL tPLPH
(C) Reset Program or Sector Erase, tPLPH > tPLRH
AC Characteristic -- Under Reset Operation
Sym. tPLPH tPLRH1 tPLRH2 Parameter RESET Low to Reset during Read (If RESET is tied to VCC, this specification is applicable) RESET Low to Reset during Sector Erase RESET Low to Reset during Program 22 12 us us 3,4 3,4 VCC=2.7V~3.6V Min. 100 Max. ns 2,4 Unit Notes
Notes: 1. See Section 3.4 for a full description of these conditions. 2. If tPLPH is < 100ns the device may still reset but this is not guaranteed. 3. If RESET is asserted while a sector erase or word program operation is not executing, the reset will complete within 100ns. 4. Sampled, but not 100% tested.
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6.2.6 DC Characteristics
Sym. ILI ILO ICCS Parameter Input Load Current Output Leakage Current VCC Standby Current VCC Note 1,2 1,2 1 2.7V-3.6V Typ. Max. 1 0.2 7 10 15 Unit uA uA uA Test Conditions VCC=VCC Max., VCCQ=VCCQ Max. VIN=VCCQ or GND VCC=VCC Max., VCCQ=VCCQ Max. VIN=VCCQ or GND VCC=VCC Max., CE=RESET=VCCQ or during Program/Erase Suspend WP=VCCQ or GND VCC=VCC Max., VCCQ=VCCQ Max. VIN=VCCQ or GND,RESET=GND0.2V VCC=VCC Max.,VCCQ=VCCQ Max. OE=VIH, CE=VIL f=5MHz, IOUT=0mA, Inputs=VIL or VIH RESET=GND0.2V VPP < VCC VPP=VPP1, Program in Progress VPP=VPP1, Erase in Progress CE=VCC, Erase Suspend in Progress VPP < VCC VPP=VPP1, Program in Progress VPP=VPP1, Program in Progress
ICCD ICCR
VCC Power-Down Current VCC Read Current
1,2 1,2,3
7 9
15 18
uA mA
IPPD ICCW ICCE
VPP Deep PowerDown Current VCC Program Current VCC Erase Current
1 1,4 1,4 1,4 1,4 1,4 1,4
0.2 18 16 7 2 0.05 0.05 -0.4 2.0 -0.1 VCCQ -0.1V
5 55 45 15 15 0.1 0.1 VCC* 0.22V VCCQ +0.3V 0.1
uA mA mA mA uA mA mA V V V V
ICCES VCC Erase Suspend Current IPPR VPP Read Current IPPW IPPE VIL VIH VOL VOH VPP Program Current VPP Erase Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
VPPLK VPP Lock-Out Voltage VPP1 VPP during Program/ Erase Operations VLKO VCC Prog/Erase Lock Voltage VLKO2 VCCQ Prog/Erase Lock Voltage
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6 6
1.65 1.5 1.2
1.0 3.6
V V V V
VCC=VCC Min, VCC=VCCQ Min IOL=100uA VCC=VCC Min, VCC=VCCQ Min IOH=-100uA Complete Write Protection
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Notes: 1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA=+25 C. 2. The test conditions VCC Max, VCCQ Max, VCC Min, and VCCQ Min refer to the maximum or minimum VCC or VCCQ voltage listed at the top of each column. VCC Max=3.3V for 0.25um 32-Mbit devices. 3. Power Savings (Mode) reduces ICCR to approximately standby levels in static operation (CMOS inputs). 4. Sampled, but not 100% tested. 5. ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is sum of ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS and ICCR. 6. Erase and Program are inhibited when VPPP/N:PM0900
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Figure 6. Automated Word Programming Flowchart
Start
Write 40H
Bus Command Operation Write Program Setup Write Program
Comments Data=40H
Program Address/Data
Read Status Register
SR.7=1 ?
No
Yes Full Status Check if Desired
Data=Data to Program Addr=Location to Program Read Status Register Data Toggle CE or OE to Update Status Register Data Standby Check SR.7 1=WSM Ready 0=WSM Busy Repeat for subsequent programming operations. SR full status check can be done after each program or after a sequence of program operations. Write FFH after the last program operation to reset device to read array mode.
Program Ccomplete
FULL STATUS CHECK PROCEDURE
Read Status Register Data(See Above)
Bus Command Operation Standby
Comments
SR.3=
1
VPP Range Error
0
SR.4=
1
Programming Error
0
SR.1=
1
Attempted Program to Locked Block- Aborted
0 Program Successful
Check SR.3 1=VPP Low Detect Standby Check SR.4 1=VPP Program Detect Standby Check SR.11 1=Attempted Program to Locked Sector-Program Aborted SR.3 MUST be cleared, if set during a program attempt, before further attempts are allowed by the Write State Machine. SR.4, SR.3, and SR.1 are only cleared by the Clear Status Register Command, in cases where multiple programmed before full status is checked. If an error is detected, clear the status register before attempting retry or other error recovery.
P/N:PM0900
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Figure 7. Program Suspend/Resume Flowchart
Start
Write B0H
Bus Command Operation Write Program Suspend Write Read Status Read
Comments Data=B0H Addr=X Data=70H Addr=X Status Register Data Toggle CE or OE to Update Status Register Data Addr=X Check SR.7 1=WSM Ready 0=WSM Busy Check SR.2 1=Program Suspended 0=Program Completed Data=FFH Addr=X Read array data from sector other than the one being programmed. Data=D0H Addr=X
Write 70H
Read Status Register
SR.7=
0
Standby
1
Stanby
SR.2= 0 Program Completed
1 Write FFH
Write Read
Read Array
Read Array Data
Write
Done Reading No
Program Resume
Yes Write D0H Write FFH
Program Write Resumed
Read Array Data
P/N:PM0900
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Figure 8. Automated Sector Erase Flowchart
Start
Write 20H
Write D0H and Block Address
Read Status Register No 0 Suspend Erase
Suspend Erase Loop
Yes
SR.7=
1 Full Status Check if Desired
Sector Erase Complete
Bus Command Comments Operation Write Erase Setup Data=20H Addr=Within Sector to Be Erased Write Erase Data=D0H Confirm Addr=Within Sector to Be Erased Read Status Register Data Toggle CE or OE to Update Status Register Data Standby Check SR.7 1=WSM Ready 0=WSM Busy Repeat for subsequent block erasures. Full status check can be done after each sector erase or after a sequence of sector erasures. Write FFH after the last write operation to reset device to read array mode. Bus Command Operation Standby Comments
FULL STATUS CHECK PROCEDURE
Read Status Register Data(See Above)
SR.3=
1
VPP Range Error
0
SR.4,5=
1
Command Sequence Error
0
SR.5=
1
Sector Erase Error
0 1 Attempted Erase of Locked Sector - Aborted
SR.1=
0 Sector Erase Successful
Check SR.3 1=VPP Low Detect Standby Check SR.4, 5 Both 1=Command Sequence Error Standby Check SR.5 1=Sector Erase Error Standby Check SR.1 1=Attempted Erase of Locked Sector- Erase Aborted SR.1 and SR.3 MUST be cleared, if set during an erase attempt, before further attempts are allowed by the Write State Machine. SR.1,3,4,5 are only cleared by the Clear Status Register Command, in cases where multiple sectors are erased before full status is checked. If an error is detected, clear the status register before attempting retry or other error recovery.
P/N:PM0900
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Figure 9. Erase Suspend/Resume Flowchart
Start
Write B0H
Bus Command Operation Write Erase Suspend Write Read Status Read
Comments Data=B0H Addr=X Data=70H Addr=X Status Register Data Toggle CE or OE to Update Status Register Data Addr=X Check SR.7 1=WSM Ready 0=WSM Busy Check SR.6 1=Erase Suspended 0=Erase Completed Data=FFH Addr=X Read array data from sector other than the one being erased. Data=D0H Addr=X
Write 70H
Read Status Register
SR.7=
0
Standby
1
Stanby
SR.6= 0 Erase Completed
1 Write FFH
Write Read
Read Array
Read Array Data
Write
Done Reading No
Erase Resume
Yes Write D0H Write FFH
Erase Write Resumed
Read Array Data
P/N:PM0900
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Figure 10. Locking Operations Flowchart
Start
Write 60H (Configuration Setup)
Write 01H, D0H, or 2FH
Write 90H (Read Configuration)
Read Sector Lock Status
Locking Change Confirmed ? Yes Write FFh (Read Array)
No
Bus Command Comments Operation Write Config. Setup Data=60H Addr=X Write Lock, unlock Data=01H (Sector Lock) or Lockdown D0H(Sector Unlock) 2FH(Sector Lockdown) Addr=Within sector to lock Write Read Data=90H (Optional) Configuration Addr=X Read Sector Lock Sector Lock Status Data (Optional) Status Addr=Second addr of sector Stanby Confirm Locking Change on Q1, Q0 (See Sector Locking State Table for valid combinations.)
Locking Change Complete
P/N:PM0900
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Figure 11. Protection Register Programming Flowchart
Start
Write C0H (Protection Reg. Program Setup)
Write Protect. Register Address/Data
Bus Command Operation Write Protection Program Setup Write Protection Program Read
Comments Data=C0H
Read Status Register
SR.7=1 ?
No
Yes Full Status Check if Desired
Program Ccomplete
Data=Data to Program Addr=Location to Program Status Register Data Toggle CE or OE to Update Status Register Data Standby Check SR.7 1=WSM Ready 0=WSM Busy Protection Program operations can only be addressed within the protection register address space. Addresses outside the defined space will return an error. Repeat for subsequent programming operations. SR Full Status Check can be done after each program or after a sequence of program operations. Write FFH after the last operation to reset device to read array mode.
FULL STATUS CHECK PROCEDURE
Read Status Register Data(See Above)
Bus Command Operation Standby
1,1 VPP Range Error
Comments
SR.3, SR.4=
SR.1, SR.4=
0,1
Protection Register programming Error
SR.1, SR.4=
1,1
Attempted Program to Locked Register Aborted
Program Successful
SR.1, SR.3, SR.4 0 1 1 VPP Low Standby 0 0 1 Prot. Reg. Prog. Error Stanby 1 0 1 Register Locked: Aborted SR.3 MUST be cleared, if set during a program attempt, before further attempts are allowed by the Write State Machine. SR.1,3,4 are only cleared by the Clear Status Register Command, in cases of multiple protection register program operations before full status is checked. If an error is detected, clear the status register before attempting retry or other error recovery.
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7 VPP Program and Erase Voltage
When VPP is between 1.65V and 3.6V, all program and erase current is drawn through the VCC pin. If VPP is driven by a logic signal, VIH=1.65V. That is, VPP must remain above 1.65V to perform in-system flash update/ modifications.
7.1 Protection Under VPPVPP can off additional hardware write protection. The VPP programming voltage can be kept low for the absolute hardware protection of all sector in the flash device. As VPP is below VPPLK, any program or erase operation will result in a error, prompting the corresponding status register bit (SR.3) to be set.
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8. QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE
MX28F640C3T/B is capable of operating in the CFI mode. This mode all the host system to determine the manufacturer of the device such as operating parameters and configuration. Two commands are required in CFI mode. Query command of CFI mode is placed first, then the Reset command exits CFI mode. These are described in Table X. The single cycle Query command is valid only when the device is in the Read mode, including Erase Suspend, Program Suspend, Standby mode, and Read ID mode; however, it is ignored otherwise. The Reset command exits from the CFI mode to the Read mode, or Erase Suspend mode, Program Suspend or read ID mode. The command is valid only when the device is in the CFI mode.
Table 9-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal) Description Query-unique ASCII string "QRY" Address h 10 11 12 Primary vendor command set and control interface ID code Address for primary algorithm extended query table Alternate vendor command set and control interface ID code (none) Address for secondary algorithm extended query table (none) 13 14 15 16 17 18 19 1A Data h 0051 0052 0059 0003 0000 0035 0000 0000 0000 0000 0000
Table 9-2. CFI Mode: System Interface Data Values
Description VCC supply, minimum (2.7V) VCC supply, maximum (3.6V) VPP supply, minimum (none) VPP supply, maximum (none) Typical timeout for single word write (2N us) Typical timeout for maximum size buffer write (2N us) Typical timeout for individual block erase (2N ms) Typical timeout for full chip erase (2N ms) Maximum timeout for single word write times (2N X Typ) Maximum timeout for maximum size buffer write times (2N X Typ) Maximum timeout for individual block erase times (2N X Typ) Maximum timeout for full chip erase times (not supported)
P/N:PM0900
Address h 1B 1C 1D 1E 1F 20 21 22 23 24 25 26
Data h 0027 0036 0017 0036 0005 0000 000A 0000 0004 0000 0003 0000
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Table 9-3. CFI Mode: Device Geometry Data Values
Description Device size (2N bytes) Flash device interface code (02=asynchronous x8/x16) Maximum number of bytes in multi-byte write (not supported) Number of erase block regions Erase block region 1 information [2E,2D] = # of blocks in region -1 [30, 2F] = size in multiples of 256-bytes Address h 27 28 29 2A 2B 2C 2D 2E 2F 30 31 32 33 34 Data h 0017 0001 0000 0000 0000 0002 T B 07 TE 00 00 20 00 00 01 07 7E 00 00 20 00 00 01
Erase Sector Region 2 information [32,31] = number of same-size sectors in region 2-1 [34,33] = region erase sector size in multiples of 256-bytes
Table 9-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
Description Query-unique ASCII string "PRI" Address h 35 36 37 38 39 3A 3B 3C 3D Data h 0050 0052 0049 0031 0030 66 00 00 00
Major version number, ASCII Minor version number, ASCII Optional Feature & Command Support bit 0 Chip Erase Supported (1=yes, 0=no) bit 1 Suspend Erase Supported (1=yes, 0=no) bit 2 Suspend Program Supported (1=yes, 0=no) bit 3 Lock/Unlock Supported (1=yes, 0=no) bit 4 Queued Erase Supported (1=yes, 0=no) bits 5-31 revered for future use; undefined bits are "0" Sector Lock Status Define which bits in the sector status Register section of the Query are implemented. bit 0 sector Lock Status Register Lock/Unlock bit (bit 0) active; (1=yes, 0=no) bit 1 sector Lock Status Register Lock/Unlock bit (bit 1) active; (1=yes, 0=no) Bits 2-15 reserved for future use. Undefined bits are 0. VCC Logic Supply Optimum Program/Erase Voltage (highest performance) bits 7-4 BCD value in volts bits 3-0 BCD value in 100mV VPP (Programming) Supply Optimum Program/Erase Voltage bits 7-4 HEX value in volts bits 3-0 BCD value in 100mV
P/N:PM0900
3F 40
03 00
41
33
42
33
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ORDER INFORMATION
PART NO. MX28F640C3TTC-90 MX28F640C3BTC-90 MX28F640C3TTC-12 MX28F640C3BTC-12 MX28F640C3TTI-90 MX28F640C3BTI-90 MX28F640C3TTI-12 MX28F640C3BTI-12 MX28F640C3TXAC-90 MX28F640C3BXAC-90 MX28F640C3TXAC-12 MX28F640C3BXAC-12 MX28F640C3TXAI-90 MX28F640C3BXAI-90 MX28F640C3TXAI-12 MX28F640C3BXAI-12 ACCESS TIME (ns) 90 90 120 120 90 90 120 120 90 90 120 120 90 90 120 120 OPERATING Current MAX.(mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 STANDBY Current MAX.(uA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 48 Pin TSOP 48 Pin TSOP 48 Pin TSOP 48 Pin TSOP 48 Pin TSOP 48 Pin TSOP 48 Pin TSOP 48 Pin TSOP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP PACKAGE
P/N:PM0900
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PACKAGE INFORMATION
P/N:PM0900
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P/N:PM0900
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REVISION HISTORY
Revision No. Description 0.1 Revise 48-ball CSP size 0.2 1. Remove 70ns speed information 2. To added the 48 CSP package size 3. Correct content error 4. Modified the testing load circuit & test spec 0.3 1. To modify Package Information 0.4 1. Correct wording error:RP-->RESET, word/byte-->word, DQ-->Q 2. To change the voltage range of VCCQ pin from 1.65V~3.6V to 2.7V~3.6V 3. Correct the sector range of sector structure table 4. To modify the locking operation flowchart 5. To correct the CFI table 0.5 1. To added address definition notes for Top/Bottom boot device of Protection Register Section 0.6 1. Removed VPP fast programming function Page P1,4 P1,2,26,28,43 P1,4 P22 P25 P44,45 All P1,5,21,29,30 P7,8 P35 P38,39 P20 P5,21,26,27 29,30,37~39 Date FEB/19/2002 JUN/19/2002
NOV/21/2002 JAN/22/2003
MAY/05/2003 AUG/20/2003
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MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
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MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.

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